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| (R) 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb 25 o C for 2N2905A for 2N2907A at T C 25 o C for 2N2905A for 2N2907A Storage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -0.6 -0.8 0.6 0.4 3 1.8 -65 to 175 175 Unit V V V A A W W W W o o T stg Tj C C 1/7 February 2003 2N2905A/2N2907A THERMAL DATA TO-39 R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 250 TO-18 83.3 375 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX I BEX V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = 0.5V) Base Cut-off Current (V BE = 0.5V) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 A -60 T j = 150 o C Min. Typ. Max. -10 -10 -50 -50 Unit nA A nA nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -10 mA -60 V I E = -10 A -5 V V CE(sat) V BE(sat) h FE I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA IC IC IC IC IC = = = = = -0.1 mA -1 mA -10 mA -150 mA -500 mA I B = -15 mA I B = -50 mA I B = -15 mA I B = -50 mA V CE = -10 V CE = -10 V CE = -10 V CE = -10 V CE = -10 V V V V V 75 100 100 100 50 200 -0.4 -1.6 -1.3 -2.6 V V V V 300 MHz 30 8 10 40 80 30 45 100 pF pF ns ns ns ns ns ns fT C EBO C CBO t d t r t s t f t on t off Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Delay Time Rise Time Storage Time Fall Time Turn-on Time Turn-off Time V CE = -20 V I C = -50 mA IC = 0 IE = 0 f = 100 MHz f = 1MHz f = 1MHz V EB = -2 V V CB = -10 V V CC = -30 V I B1 = -15 mA V CC = -30 V I B1 = -15 mA I C = -150 mA I C = -150 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA V CC = -30 V I B1 = -15 mA I C = -150 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA * Pulsed: Pulse duration = 300 s, duty cycle 1 % ** See test circuit 2/7 2N2905A/2N2907A Normalized DC Current Gain. Collector Emitter Saturation Voltage. Collector Base and Emitter-base capacitances. Switching Characteristics. 3/7 2N2905A/2N2907A Test Circuit for ton, tr, td. PULSE GENERATOR : tr 2.0 ms Frequency = 150 Hz Zo = 50 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 10 M Test Circuit for toff, to, tf. PULSE GENERATOR : tr 2.0 ns Frequency = 150 Hz Zo = 50 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 M 4/7 2N2905A/2N2907A TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 5/7 2N2905A/2N2907A TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 6/7 2N2905A/2N2907A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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